Research on the use of "nano-materials" having extraordinary physical properties has been carried out in the field of semiconductors, FPDs and electronic components.
Conventionally, even if bulk materials such as silicon substrate undergo micromachining to obtain functional elements, their physical properties rarely change, making the execution of new functions impossible.
However, it was discovered that the deposition and assembling of "nano-materials," which inherently have extraordinary physical properties, allow for the performance of new functions. Expectations are running high for the application of nano-materials in various fields.
Through the "R&D Equipment on Practical Application of Technologies Originated from Universities to Business" (Matching Fund), we have been carrying out research on "nanocrystalline silicon" and working toward the development of new processes in a joint effort with the University of Agriculture and Technology TLO Corporation and Prof. Yoshinobu Okoshi of the Tokyo University of Agriculture and Technology with the help of NEDO.

The key to the successful development of this technique is to establish a new process in which "growth of nanocrystalline silicon particles by thermal CVD of silane gas" and "oxidation of the surface by plasma oxidation processing" are repeated in the same chamber. Due to the use of thermal CVD of silane gas, the crystallization rate of each nanocrystalline silicon particle is 100%.Moreover, the filling density of nanocrystalline silicon particles is 100% because growth is achieved by repeating "thermal CVD of silane gas" and "plasma oxidation processing."
With the developed nano-control chemical vapor deposition equipment, it is possible to control the "diameter" of nanocrystalline silicon particles based on the irradiation time of the silane gas. In addition, the "surface oxide film thickness" can also be controlled based on the irradiation time of the oxygen plasmas.

The applications for nanocrystalline silicon thin film that creates new phenomena with its extraordinary physical properties include the following:
(1) Light-emitting optical element
(2) Ballistic electron surface emission source
(3) Single electron transistor by entrapment of single electron