C-7100 is PVD equipment for use in both the development and production of the MRAMs that are expected as the next nonvolatile memory and the production of next-generation GMR heads, and TMR heads utilizing the tunnel effect.
This equipment has incorporated LRP (Low Pressure Remote Plasma Sputtering) as new sputtering technology to offer an excellent film thickness distribution of ±1% or less.
A newly designed magnetron cathode enables low-pressure discharge at 0.02 Pa, lower by one order of magnitude than normal sputtering pressure, thereby allowing this equipment to form remarkably even and low-resistance films.

All the head processes have been integrated into the C-7600.
Canon ANELVA has realized in its line up this integrated magnetic HEAD production tool.
● Capable of integrated processing from the PR-on-TMR state to the cap layer formation through milling and various types of deposition.
● A group of modules provides the optimal processed shape required of each element.
The equipment puts IBE, anisotropic sputtering, isotropic sputtering, RIE, and the like to full use.
● Integrated vacuum process further advances maintenance and control of the film characteristics.

Canon ANELVA developed the first reactive ion etching equipment in the world. The I-4500 is dry etching equipment for magnetic films, into which Canon ANELVA’s technologies and achievements have been incorporated.
The equipment is compatible with etching processes for oxide, tungsten, and metal films. It has been developed for improving investment efficiency with its high throughput and high availability.

● Equipment to mass-produce damage-free metal gates with the PVD method.
● Capable of controlled film composition through ultrahigh vacuum co-sputtering.
● High-precision control of film thickness and excellent uniformity (1σ < 1%).
● Compatible with the sub-32nm node or less damascene gate formation process.
(High-coverage deposition with the PCM-PVD method).
● Low material cost. Easy changeover of material.
● Purity of material is reflected in the film.

I-1230 processes conductive metal for semiconductor memory interconnect. Our original Caera cathode enables both good uniformity and low particle on reactive sputtering and high stress materials. With these functions, I-1230 achieved high yield and productivity, therefore, can significantly lower the production cost
●CAERA cathode: Cathode magnet position (3D) is variable in-situ per each recipe, and enables easy optimization of uniformity and cleaning
●Throughput: 80wfs/H, world's best standard
●Uptime ratio: >90％ on semiconductor memory production line (failure rate <1%)

This is PVD equipment capable of accommodating the formation of various lead free UBM (Under Bump Metal) films.
Various leading vendors use it as equipment for φ 300 mm UBM.
● Stress control through applying bias power to the substrate.
● Adopting the new cathode (CX-PMC) has achieved:
・Low-temperature deposition
・Damage-free process
・Improved efficiency of adhesion
● Supports mounting up to six process modules.
● Simple construction offers excellent customizability.

The surface reaction epitaxy equipment, I-2100SRE/I-2300SRE, is deposition equipment to which is applied the ultra-high vacuum technology cultivated by us for many years. The ultra-high vacuum (on the order of 10-8 Pa), extremely clean deposition environment and the complete cold-wall style that only heats the substrates have achieved deposition only through the surface reaction. This equipment contributes to self-aligning processes such as capacitor formation and selective epitaxial growth.
[Applications]
● Strained silicon Embedded SiGe and Si:C.
● Ge channel MOSEFT (for research use).
[Features]
● Selective growth of Si, SiGe, SiGeC, or Ge is available at low temperature.
● Good uniformity of film thickness, and Ge and C content.
● Practical growth rate.

● The C-7100EX has arrived on the market as ready usable equipment for mass producing MRAMs. It is a machine that can mass-produce φ300 mm wafers, upgraded from the C-7100 and utilizing experience from the φ300 mm wafer production line.
● With architectural integration with the proven I-1000 series, the equipment makes the most of conventional software assets such as EES.
● We are completely ready for system construction prior to your oncoming mass-production.

Canon ANELVA’s I-4230 is mass-production equipment capable of integrated processing of masks, MTJ elements, and protective films for MRAM magnetic film stacks.
● Offering high yield with real devices.
● Micropattern processing free of shorts has been achieved on the mass-production level.
● Capable of retaining a high MR ratio even after etching.
● Capable of integrated formation of protective films after processing.
(CVD chamber has to be added.)
● Low-damage process with CH3OH gas.
● Easy maintenance and flexible equipment configuration.
● Compatible with φ150 to φ300 mm wafers.